Defects in Single Crystalline Ammonothermal Gallium Nitride

Single gallium nitride nanowire lasers.

There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide...

Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth

The Ammonothermal Crystal Growth of Gallium Nitride - A Technique on the Up Rise

| Gallium nitride (GaN) is one of the most important wide band gap semiconductor materials in modern technology with even higher expectations for future applications it is ought to play a crucial role. Among this, the growth of lattice and thermally matched GaN substrates for the GaN device technology takes an essential piece. This paper is reporting on the achievements in the ammonothermal gro...

Nitrogen vacancies as major point defects in gallium nitride.

We present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also demonstrate that the activation energy for self-diffusion over the nitrogen sublattice is lower than over the gal...

Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering.

Single-crystalline nanoporous gallium nitride (GaN) thin films were fabricated with the pore size readily tunable in 20-100 nm. Uniform adhesion and spreading of human mesenchymal stem cells (hMSCs) seeded on these thin films peak on the surface with pore size of 30 nm. Substantial cell elongation emerges as pore size increases to ∼80 nm. The osteogenic differentiation of hMSCs occurs preferent...